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JANTX1N5554/TR

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JANTX1N5554/TR

DIODE GEN PURP 1KV 5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANTX1N5554-TR is a military-grade general-purpose diode designed for demanding applications. This component offers a maximum DC reverse voltage (Vr) of 1000 V and an average rectified current (Io) of 5A. Featuring a standard recovery speed with a reverse recovery time (trr) of 2 µs, it exhibits a typical forward voltage (Vf) of 1.3 V at 9A and a low reverse leakage current of 2 µA at 1 V. The JANTX1N5554-TR is housed in a through-hole package with an axial lead configuration (B, Axial) and is supplied in tape and reel packaging. This diode meets MIL-PRF-19500/420 qualification, making it suitable for use in aerospace and defense systems. The operating junction temperature range is -65°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseB, Axial
Mounting TypeThrough Hole
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)5A
Supplier Device PackageB, Axial
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 9 A
Current - Reverse Leakage @ Vr2 µA @ 1 V
QualificationMIL-PRF-19500/420

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