JANTX1N5553US/TR
DIODE GEN PURP 800V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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This Microchip Technology JANTX1N5553US-TR is a military-grade, general-purpose diode. It features a 800 V reverse voltage and a 3 A average rectified forward current (Io). The diode exhibits a low reverse leakage current of 1 µA at 800 V and a forward voltage drop of 1.3 V at 9 A. With a reverse recovery time of 2 µs, it is designed for standard recovery applications. The component is housed in a D-5B (SQ-MELF, E) surface mount package and is supplied on tape and reel. Qualified to MIL-PRF-19500/420, this diode is suitable for demanding applications in aerospace, defense, and industrial sectors. Operating temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Qualification | MIL-PRF-19500/420 |
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