JANTX1N5552US/TR
DIODE GEN PURP 600V 5A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5552US-TR is a general-purpose diode designed for high-reliability applications. This hermetically sealed SQ-MELF packaged device offers a 600V reverse voltage rating and a 5A average rectified current capability. It features a standard recovery time exceeding 500ns at 200mA and a forward voltage drop of 1.2V at 9A. The reverse leakage current is a mere 1 µA at 600V. Operating across a wide temperature range of -65°C to 175°C, this component meets MIL-PRF-19500/420 qualification, making it suitable for demanding military and industrial sectors. Supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/420 |
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