JANTX1N5417US/TR
DIODE GEN PURP 200V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5417US-TR is a military-grade general-purpose diode designed for demanding applications. This component features a 200V reverse voltage (Vr) and a 3A average rectified current (Io). Its surface mount configuration, within the SQ-MELF, E (D-5B) package, is delivered on tape and reel (TR) for automated assembly. Exhibiting a forward voltage (Vf) of 1.5V at 9A, this fast recovery diode has a reverse recovery time (trr) of 150 ns. The reverse leakage current at 200V is a mere 1 µA. Qualified to MIL-PRF-19500/411, the JANTX1N5417US-TR operates across a junction temperature range of -65°C to 175°C. This robust component is suitable for use in aerospace and defense systems requiring high reliability and precise performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Qualification | MIL-PRF-19500/411 |
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