JANTX1N5417/TR
DIODE GEN PURP 200V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5417-TR is a general-purpose diode featuring a 200V reverse voltage rating and a 3A average rectified current capability. This device is qualified to MIL-PRF-19500/411, indicating its suitability for demanding military applications. The JANTX1N5417-TR offers a forward voltage drop of 1.5V at 9A and a reverse leakage current of 1 µA at 200V. With a typical reverse recovery time of 150 ns, it is classified as a fast-recovery diode. The component operates across a junction temperature range of -65°C to 175°C and is supplied in a B, Axial package on tape and reel for efficient automated assembly. This diode is commonly utilized in power supply circuits, switching applications, and general rectification within the aerospace and defense industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Qualification | MIL-PRF-19500/411 |
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