JANTX1N5416/TR
DIODE GEN PURP 100V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N5416-TR is a military-grade general-purpose diode with a maximum DC reverse voltage (Vr) of 100 V and an average rectified forward current (Io) of 3 A. This through-hole component, packaged in a B, Axial case and supplied on tape and reel (TR), features a forward voltage (Vf) of 1.5 V at 9 A and a reverse leakage current of 1 µA at 100 V. The diode offers a reverse recovery time (trr) of 150 ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -65°C to 175°C, the JANTX1N5416-TR meets MIL-PRF-19500/411 qualification standards. This component is suitable for demanding applications in aerospace, defense, and high-reliability industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Qualification | MIL-PRF-19500/411 |
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