JANTX1N4150-1/TR
DIODE GEN PURP 50V 200MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N4150-1-TR is a general-purpose silicon switching diode with a repetitive peak reverse voltage of 50V and a continuous average forward current of 200mA. This axial-leaded component, housed in a DO-204AH (DO-35) package, offers a low forward voltage of 1V at 200mA and a reverse leakage current of 100 nA at 50V. Featuring a reverse recovery time of 4ns, it is suitable for small signal applications. The JANTX1N4150-1-TR meets MIL-PRF-19500/231 qualification and operates across a temperature range of -65°C to 175°C. It is supplied in tape and reel packaging. This device finds application in various military and industrial systems requiring reliable switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/231 |
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