JANTX1N3613/TR
DIODE GEN PURP 600V 1AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
The Microchip Technology JANTX1N3613-TR is a general-purpose diode designed for demanding applications. This through-hole component, featuring an axial package, offers a reverse voltage rating of 600 V and an average rectified current capability of 1 A. It exhibits a maximum forward voltage of 1.1 V at 1 A and a low reverse leakage current of 1 µA at its maximum reverse voltage. Qualified to MIL-PRF-19500/228, this military-grade diode boasts a standard recovery speed of greater than 500 ns at 200 mA. Operating across a wide junction temperature range of -65°C to 175°C, it is suitable for use in aerospace and defense systems. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/228 |
Request a Quote
Clients Also Buy
1N5806US/TR
DIODE GEN PURP 150V 1A D-5A
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5553/TR
DIODE GEN PURP 800V 3A
