JANTX1N3595US/TR
DIODE GEN PURP 200MA B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANTX1N3595US-TR is a military-grade general-purpose diode with a maximum average rectified current of 200mA. This device features a low reverse leakage current of 1 nA at 125 V and a forward voltage of 1 V at 200 mA. The SQ-MELF, B package allows for efficient surface mounting and is supplied on tape and reel for automated assembly. Qualified to MIL-S-19500-241, this diode offers a reverse recovery time of 3 µs and operates across a wide temperature range of -65°C to 150°C. Its robust construction and performance characteristics make it suitable for demanding applications in aerospace, defense, and industrial sectors where reliability is paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 1 nA @ 125 V |
| Qualification | MIL-S-19500-241 |
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