JANTX1N1190
DIODE GEN PURP 600V 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANTX1N1190 is a military-grade, general-purpose diode with a 600V reverse voltage rating and an average rectified current capability of 35A. This stud-mount device, housed in a DO-5 package (DO-203AB), features a forward voltage drop of 1.4V at 110A and a low reverse leakage of 10 µA at 600V. Its operating junction temperature range is -65°C to 175°C. Qualified to MIL-PRF-19500/297, this diode is suitable for demanding applications in aerospace and defense, industrial power supplies, and high-reliability systems requiring robust performance and extended temperature operation. The JANTX1N1190 utilizes standard technology and is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | MIL-PRF-19500/297 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
