JANS1N6844U3/TR
DIODE SCHOTTKY REV 100V 15A U3Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N6844U3-TR is a Schottky rectifier diode designed for high-current applications requiring fast switching performance. This component features a 100V reverse voltage rating with a maximum forward voltage drop of 900mV at 15A. It offers an average rectified current handling capability of 15A and a low reverse leakage current of 100 µA at 100V. The diode exhibits a capacitance of 600pF at 5V and 1MHz. Designed for surface mounting, it is housed in a U3 (SMD-0.5) package and supplied on tape and reel. Operating across a wide temperature range of -65°C to 150°C, this device is qualified to MIL-PRF-19500/679, indicating its suitability for demanding military and industrial environments. Its technology incorporates Schottky characteristics for efficient power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky, Reverse Polarity |
| Capacitance @ Vr, F | 600pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | U3 (SMD-0.5) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 15 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
| Qualification | MIL-PRF-19500/679 |
Request a Quote
Clients Also Buy
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
S4380D
DIODE GEN PURP 800V 150A DO205AA
