JANS1N6844U3
DIODE SCHOTTKY 100V 15A U3Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N6844U3 is a Schottky diode designed for demanding applications. This military-grade component offers a 100V reverse voltage and a 15A average rectified current (Io). Featuring a U3 (SMD-0.5) surface mount package, it provides a forward voltage (Vf) of 1V at 20A. Reverse leakage current is rated at 100 µA at 100V. The diode operates within a junction temperature range of -65°C to 150°C and is qualified under MIL-PRF-19500/679. Its typical capacitance is 600pF at 5V and 1MHz. This component is suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 600pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | U3 (SMD-0.5) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 20 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
| Qualification | MIL-PRF-19500/679 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
