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JANS1N6642US

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JANS1N6642US

DIODE GEN PURP 75V 300MA D-5D

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANS1N6642US is a military-grade, fast recovery general-purpose diode. This surface mount component, packaged in a D-5D (SQ-MELF) case, offers a maximum DC reverse voltage of 75V and an average rectified forward current of 300mA. Its low reverse leakage is specified at 500 nA at 75V. The diode exhibits a forward voltage drop of 1.2V at 100mA and a reverse recovery time (trr) of 5 ns, categorizing it as a fast recovery device. With a junction operating temperature range of -65°C to 175°C, this component meets MIL-PRF-19500/578 qualification. Its capacitance at 0V and 1MHz is 5pF. This diode is suitable for applications in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseD, SQ-MELF
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)5 ns
TechnologyStandard
Capacitance @ Vr, F5pF @ 0V, 1MHz
Current - Average Rectified (Io)300mA
Supplier Device PackageD-5D
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)75 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 mA
Current - Reverse Leakage @ Vr500 nA @ 75 V
QualificationMIL-PRF-19500/578

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