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JANS1N6641US

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JANS1N6641US

DIODE GEN PURP 50V 300MA D-5D

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

The Microchip Technology JANS1N6641US is a general-purpose diode with a maximum reverse voltage of 50 V and an average rectified current of 300 mA. This military-grade component, qualified to MIL-PRF-19500/609, features a fast recovery time of 5 ns and a forward voltage of 1.1 V at 200 mA. The reverse leakage current is a mere 100 nA at 50 V. Housed in a SQ-MELF, D (D-5D) surface mount package, it operates across a temperature range of -65°C to 175°C. This diode is suitable for applications in aerospace and defense, as well as general industrial electronics requiring reliable switching performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSQ-MELF, D
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)5 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)300mA
Supplier Device PackageD-5D
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 200 mA
Current - Reverse Leakage @ Vr100 nA @ 50 V
QualificationMIL-PRF-19500/609

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