JANS1N6641US
DIODE GEN PURP 50V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N6641US is a general-purpose diode with a maximum reverse voltage of 50 V and an average rectified current of 300 mA. This military-grade component, qualified to MIL-PRF-19500/609, features a fast recovery time of 5 ns and a forward voltage of 1.1 V at 200 mA. The reverse leakage current is a mere 100 nA at 50 V. Housed in a SQ-MELF, D (D-5D) surface mount package, it operates across a temperature range of -65°C to 175°C. This diode is suitable for applications in aerospace and defense, as well as general industrial electronics requiring reliable switching performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/609 |
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