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JANS1N6641

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JANS1N6641

DIODE GEN PURP 100V 300MA DO35

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANS1N6641 is a military-grade general-purpose diode designed for demanding applications. This axial leaded device, housed in a DO-204AH (DO-35) package, offers a maximum DC reverse voltage of 100V and an average rectified forward current of 300mA. It features a fast recovery time of 5 ns, making it suitable for high-speed switching circuits. The forward voltage drop is a maximum of 1.1V at 200mA, and the reverse leakage current is rated at 100nA at 50V. Operating across a junction temperature range of -65°C to 175°C, this diode meets the stringent requirements of MIL-PRF-19500/609 qualification. Its robust construction and performance characteristics lend themselves to use in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDO-204AH, DO-35, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)5 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)300mA
Supplier Device PackageDO-204AH (DO-35)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 200 mA
Current - Reverse Leakage @ Vr100 nA @ 50 V
QualificationMIL-PRF-19500/609

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