JANS1N6640US/TR
DIODE GEN PURP 50V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N6640US-TR is a general-purpose diode designed for high-reliability applications. This military-grade component features a 50V reverse voltage rating and a 300mA average rectified current capability. The device exhibits a low forward voltage of 1V at 200mA and a reverse leakage current of 100 nA at 50V. Its fast recovery time of 4 ns makes it suitable for high-speed switching circuits. The JANS1N6640US-TR is housed in a SQ-MELF, D (D-5D) package and is supplied on tape and reel. This component is qualified to MIL-PRF-19500/609, indicating its suitability for demanding aerospace and defense systems. Its operating junction temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/609 |
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