JANS1N6639US/TR
DIODE GEN PURP 75V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
The Microchip Technology JANS1N6639US-TR is a high-reliability general-purpose diode designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/609, features a 75V reverse voltage rating and a 300mA average rectified forward current capability. Its fast recovery time of 4 ns makes it suitable for high-frequency switching circuits. The low reverse leakage current of 100 nA at 75V contributes to efficient operation. The diode exhibits a forward voltage drop of 1.2V maximum at 500mA. Packaged in a D-5D (SQ-MELF) surface-mount case and supplied on tape and reel, this device is utilized in aerospace, defense, and industrial sectors where robust performance and extreme temperature operation (-65°C to 175°C) are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 500 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 75 V |
| Qualification | MIL-PRF-19500/609 |
Request a Quote
Clients Also Buy
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
S4380D
DIODE GEN PURP 800V 150A DO205AA
