JANS1N6639US
DIODE GEN PURP 75V 300MA D-5DManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N6639US is a military-grade, fast recovery diode designed for general-purpose applications. This surface mount component, housed in a D-5D (SQ-MELF) package, offers a repetitive peak reverse voltage of 75V and a maximum average rectified forward current of 300mA. The diode exhibits a typical forward voltage drop of 1.2V at 500mA and a low reverse leakage current of 100 nA at its maximum reverse voltage. With a reverse recovery time of 4 ns, it is suitable for high-frequency switching applications. The JANS1N6639US is qualified to MIL-PRF-19500/609, ensuring reliability in demanding environments across aerospace, defense, and industrial sectors. Its operating junction temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, D |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | D-5D |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 500 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 75 V |
| Qualification | MIL-PRF-19500/609 |
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