JANS1N6638US
DIODE GP 125V 300MA B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N6638US is a military-grade general-purpose diode. This surface-mount component, packaged in a SQ-MELF, B configuration, offers a reverse voltage capability of 125 V and an average rectified current of 300 mA. Key performance specifications include a forward voltage of 1.1 V at 200 mA and a fast reverse recovery time of 4.5 ns. The JANS1N6638US is designed for operation across a wide junction temperature range of -65°C to 175°C. This device meets the stringent requirements of MIL-PRF-19500/578 qualification and finds application in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4.5 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 125 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 200 mA |
| Qualification | MIL-PRF-19500/578 |
Request a Quote
Clients Also Buy
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
S4380D
DIODE GEN PURP 800V 150A DO205AA
