JANS1N6620US
DIODE GP 200V 1.2A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N6620US is a military-grade general-purpose diode designed for high-reliability applications. This fast-recovery diode, with a reverse recovery time of 45 ns, features a maximum DC reverse voltage of 200 V and an average rectified forward current of 1.2 A. The forward voltage drop is 1.6 V at 2 A. Packaged in an A, SQ-MELF surface-mount configuration, the JANS1N6620US operates across a junction temperature range of -65°C to 150°C. This component adheres to the MIL-PRF-19500/585 qualification standard. It is utilized in demanding environments, including aerospace and defense systems, where robust performance and extended operational lifecycles are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 45 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.2A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 2 A |
| Qualification | MIL-PRF-19500/585 |
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