JANS1N5822US
DIODE SCHOTTKY 40V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5822US is a Schottky diode with a 40V reverse voltage rating and a 3A average rectified forward current. This device features a low forward voltage drop of 500mV at 3A, contributing to efficient power conversion. Designed for high-reliability applications, the JANS1N5822US is qualified to MIL-PRF-19500/620 and operates across a wide temperature range of -65°C to 150°C. The SQ-MELF, B package provides a compact surface mount solution suitable for demanding environments. This component is commonly utilized in power supply circuits, switching applications, and various aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Qualification | MIL-PRF-19500/620 |
Request a Quote
Clients Also Buy
1N3600UR
DIODE GEN PURP 75V 300MA DO213AA
JANTX1N6874UTK2CS/TR
POWER SCHOTTKY
UFS110JE3/TR13
DIODE GEN PURP 100V 1A DO214BA
