JANS1N5816R
DIODE GEN PURP 150V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5816R is a military-grade, stud-mount rectifier diode in a DO-203AA (DO-4) package. This component offers a maximum repetitive reverse voltage of 150V and a forward voltage drop of 950mV at 20A. It features an average rectified forward current capacity of 20A and a low reverse leakage current of 10 µA at 150V. The diode boasts a reverse recovery time of 35 ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -65°C to 175°C, this device is constructed with standard technology and is available in bulk packaging. The JANS1N5816R is qualified to MIL-PRF-19500/478, indicating its suitability for demanding applications in industries such as aerospace, defense, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
| Qualification | MIL-PRF-19500/478 |
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