JANS1N5816
DIODE SCHOTTKY 150V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5816 is a Schottky diode with a 150 V reverse voltage rating and a 20 A average rectified current capability. This component features a low forward voltage drop of 950 mV at 20 A and a reverse leakage current of 10 µA at 150 V. The JANS1N5816 is designed for high-reliability applications with a military-grade qualification under MIL-PRF-19500/478. It has a fast reverse recovery time of 35 ns. The diode is housed in a DO-203AA (DO-4) package with a stud mount for chassis integration, operating across a junction temperature range of -65°C to 175°C. Key applications include power supply rectification, switching power supplies, and high-frequency applications where efficient current handling and low voltage drop are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Schottky |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 150 V |
| Qualification | MIL-PRF-19500/478 |
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