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JANS1N5814

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JANS1N5814

DIODE GEN PURP 100V 20A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JANS1N5814 is a military-grade, fast-recovery general-purpose diode. This component features a 100V reverse voltage (Vr) and a 20A average rectified forward current (Io). The forward voltage drop (Vf) is specified at a maximum of 950mV at 20A. Reverse leakage current (Ir) is a low 10µA at 100V. The diode boasts a reverse recovery time (trr) of 35ns, classifying it as fast recovery. It is housed in a DO-203AA (DO-4) stud mount package, suitable for demanding thermal environments. With a wide operating junction temperature range of -65°C to 175°C and MIL-PRF-19500/478 qualification, this diode is well-suited for high-reliability applications in aerospace, defense, and industrial power systems. The capacitance at 10V and 1MHz is 300pF.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeStud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Capacitance @ Vr, F300pF @ 10V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 100 V
QualificationMIL-PRF-19500/478

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