JANS1N5814
DIODE GEN PURP 100V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5814 is a military-grade, fast-recovery general-purpose diode. This component features a 100V reverse voltage (Vr) and a 20A average rectified forward current (Io). The forward voltage drop (Vf) is specified at a maximum of 950mV at 20A. Reverse leakage current (Ir) is a low 10µA at 100V. The diode boasts a reverse recovery time (trr) of 35ns, classifying it as fast recovery. It is housed in a DO-203AA (DO-4) stud mount package, suitable for demanding thermal environments. With a wide operating junction temperature range of -65°C to 175°C and MIL-PRF-19500/478 qualification, this diode is well-suited for high-reliability applications in aerospace, defense, and industrial power systems. The capacitance at 10V and 1MHz is 300pF.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | MIL-PRF-19500/478 |
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