JANS1N5811US
DIODE GEN PURP 150V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5811US is a general-purpose silicon rectifier diode. This component, qualified to MIL-PRF-19500/477, features a 150V reverse voltage rating and an average rectified current capability of 3A. The diode exhibits a forward voltage drop of 875mV at 4A and a reverse recovery time of 30ns, classifying it as a fast recovery diode. The JANS1N5811US is housed in a SQ-MELF, B package suitable for surface mounting and operates across a junction temperature range of -65°C to 175°C. This component is commonly utilized in aerospace, defense, and high-reliability industrial applications where robust performance and stringent qualification are paramount.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
