JANS1N5811URS/TR
UFR,FRRManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
The Microchip Technology JANS1N5811URS-TR is a military-grade, Fast Recovery diode with a 150 V reverse voltage and 3 A average rectified current (Io). This component features aSQ-MELF, B surface mount package, suitable for demanding applications. It offers a low 875 mV forward voltage (Vf) at 4 A and a reverse leakage current of 5 µA at 150 V. With a reverse recovery time (trr) of 30 ns, it is classified as Fast Recovery. The operating temperature range is -65°C to 175°C. This diode is compliant with MIL-PRF-19500/477 qualification, making it a reliable choice for aerospace, defense, and industrial systems requiring high-performance rectification. The JANS1N5811URS-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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