JANS1N5811URS
DIODE GEN PURP 150V 6A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5811URS is a military-grade, fast-recovery general-purpose diode. This SQ-MELF, B packaged component offers a reverse voltage rating of 150V and an average rectified current capability of 6A. With a forward voltage drop of 875mV at 4A and a reverse recovery time of 30ns, it is suitable for applications requiring efficient rectification. The operating junction temperature range is -65°C to 175°C. This device adheres to the MIL-PRF-19500/477 qualification standard and is supplied in bulk packaging. Its specifications make it suitable for use in aerospace, defense, and high-reliability industrial power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
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