JANS1N5809US
DIODE GEN PURP 100V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5809US, a Fast Recovery Diode, is designed for demanding applications. This JANS-qualified component offers a reverse voltage of 100V and an average rectified current of 3A. Its SQ-MELF, B package facilitates efficient surface mounting. With a maximum forward voltage of 875mV at 4A and a reverse recovery time of 30ns, this diode ensures robust performance. Operating across a junction temperature range of -65°C to 175°C, the JANS1N5809US meets MIL-PRF-19500/477 qualification. It finds application in aerospace, defense, and high-reliability industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
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