JANS1N5809URS/TR
UFR,FRRManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5809URS-TR is a fast recovery diode in a SQ-MELF, B surface mount package. This military-grade component offers a reverse voltage rating of 100V and an average rectified current of 3A. Key specifications include a forward voltage of 875mV at 4A and a reverse leakage of 5 µA at 100V. The diode exhibits a reverse recovery time of 30 ns and a capacitance of 60pF at 10V, 1MHz. Designed for demanding applications, it operates across a junction temperature range of -65°C to 175°C and is supplied in tape and reel (TR) packaging. This component is qualified to MIL-PRF-19500/477, making it suitable for use in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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