JANS1N5809URS
DIODE GEN PURP 100V 6A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5809URS is a military-grade, general-purpose diode designed for demanding applications. This surface-mount component, packaged in a SQ-MELF, B configuration, offers a maximum DC reverse voltage (Vr) of 100 V and an average rectified current (Io) of 6 A. The forward voltage (Vf) is specified at a maximum of 875 mV at 4 A. Featuring a fast recovery time of 30 ns, this diode is suitable for power supply rectification and switching applications. Its robust construction and MIL-PRF-19500/477 qualification ensure reliability in harsh environments. The operating junction temperature range is -65°C to 175°C. This component is commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
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