JANS1N5809
DIODE GEN PURP 100V 3A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5809 is a military-grade, general-purpose axial diode with a maximum reverse voltage of 100 V and an average rectified current of 3 A. This through-hole component, packaged in B, Axial, features a forward voltage of 875 mV at 4 A and a reverse leakage of 5 µA at 100 V. Its fast recovery time is rated at 30 ns. The JANS1N5809 is qualified to MIL-PRF-19500/477 and operates across a junction temperature range of -65°C to 175°C. Applications for this component are found in aerospace, defense, and industrial sectors requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Qualification | MIL-PRF-19500/477 |
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