JANS1N5807US
DIODE GEN PURP 50V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5807US is a military-grade, fast-recovery rectifier diode in a SQ-MELF package. This general-purpose diode offers a maximum reverse voltage of 50 V and a continuous average rectified current of 3 A. Its forward voltage is specified at 875 mV maximum at 4 A. With a reverse recovery time of 30 ns, it is suitable for applications requiring efficient rectification. The operating junction temperature range is -65°C to 175°C. This component is qualified under MIL-PRF-19500/477 and is supplied in bulk packaging. It finds application in aerospace and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
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