JANS1N5807URS
DIODE GEN PURP 50V 6A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5807URS is a 50V, 6A general-purpose diode, manufactured to military-grade specifications under MIL-PRF-19500/477 qualification. This component features a SQ-MELF, B surface-mount package, designed for efficient thermal management. With an average rectified current (Io) capability of 6A and a maximum forward voltage (Vf) of 875mV at 4A, it offers robust performance. The diode's fast recovery time of 30 ns is suitable for applications requiring rapid switching characteristics. Operating across a junction temperature range of -65°C to 175°C, this component finds utility in demanding environments, including aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Qualification | MIL-PRF-19500/477 |
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