JANS1N5806US/TR
DIODE GEN PURP 150V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5806US-TR is a military-grade, surface-mount general-purpose diode. This component, featuring a D-5A (SQ-MELF, A) package, is supplied on tape and reel for automated assembly. It offers a maximum DC reverse voltage of 150V and an average rectified current capability of 1A. The diode exhibits a typical forward voltage drop of 875mV at 1A and a reverse leakage current of 1 µA at 150V. With a reverse recovery time of 25 ns, it is classified as a fast recovery diode. Its operating junction temperature range is -65°C to 175°C. This device is qualified to MIL-PRF-19500/477 standards and finds application in demanding aerospace and defense systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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