JANS1N5804US
DIODE GEN PURP 100V 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5804US is a general-purpose diode with a 100V reverse voltage rating and 1A average rectified current capability. This military-grade component, qualified to MIL-PRF-19500/477, features a fast recovery time of 25 ns, making it suitable for high-frequency applications. The diode exhibits a maximum forward voltage of 975 mV at 2.5A and a reverse leakage of 1 µA at 150V. Its capacitance is rated at 25pF @ 10V, 1MHz. Packaged in an A, Axial through-hole configuration, this device operates across a wide temperature range of -65°C to 175°C. Applications include power supplies, switching circuits, and general rectification in demanding environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/477 |
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