JANS1N5802US
DIODE GEN PURP 50V 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5802US is a military-grade general-purpose diode with a maximum reverse voltage of 50V and an average rectified current of 1A. This through-hole component, housed in an A, Axial package, features a forward voltage of 975mV at 2.5A and a reverse recovery time of 25ns, classifying it as a fast recovery diode. Its operating junction temperature range is -65°C to 175°C. The JANS1N5802US is qualified under MIL-PRF-19500/477, making it suitable for demanding applications in aerospace and defense sectors. Additional specifications include a capacitance of 25pF at 10V and 1MHz.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A |
| Qualification | MIL-PRF-19500/477 |
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