JANS1N5622US/TR
UFR,FRRManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5622US-TR is a 1A, 1000V surface mount diode designed for high-reliability applications. This military-grade component, qualified to MIL-PRF-19500/427, features a SQ-MELF, A package and operates across a junction temperature range of -65°C to 200°C. It offers a forward voltage of 1.3V at 3A and a reverse leakage of only 500 nA at 1000V. The diode's standard recovery time (trr) is 2 µs, suitable for applications requiring robust performance in demanding environments. This component is commonly utilized in aerospace, defense, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 1000 V |
| Qualification | MIL-PRF-19500/427 |
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