JANS1N5622US
DIODE GEN PURP 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5622US is a military-grade, general-purpose diode designed for demanding applications. This SQ-MELF packaged component features an average rectified current (Io) of 1A and a maximum forward voltage (Vf) of 1.3V at 3A. Qualified to MIL-PRF-19500/427, it operates across a wide junction temperature range of -65°C to 200°C. The diode's standard recovery speed, exceeding 500ns for currents over 200mA, and a reverse recovery time (trr) of 2 µs, make it suitable for various power and signal conditioning circuits. This component is commonly utilized in aerospace, defense, and industrial systems requiring high reliability and performance under extreme environmental conditions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Qualification | MIL-PRF-19500/427 |
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