JANS1N5622
DIODE GEN PURP 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5622 is a General Purpose Diode, rated for 1A average rectified current. This through-hole component features an axial package (A) and operates within a junction temperature range of -65°C to 200°C. Key specifications include a maximum forward voltage of 1.3V at 3A and a reverse leakage of 500nA at 1000V. Qualified to MIL-PRF-19500/427, this device is suitable for demanding applications requiring high reliability. Its standard recovery speed is characterized by a reverse recovery time of 2µs. This component finds application in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 1000 V |
| Qualification | MIL-PRF-19500/427 |