JANS1N5621US
DIODE GEN PURP 800V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5621US is a high-performance, general-purpose rectifier diode designed for demanding applications. This military-grade component features a maximum DC reverse voltage of 800 V and an average rectified forward current of 1 A. The diode exhibits a fast recovery time of 300 ns and a forward voltage drop of up to 1.6 V at 3 A. Its SQ-MELF, A package facilitates efficient surface mounting, making it suitable for high-density circuit designs. The operating junction temperature range of -65°C to 175°C ensures reliability in extreme environments. This component is qualified to MIL-PRF-19500/429, indicating its suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 300 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Qualification | MIL-PRF-19500/429 |
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