JANS1N5619US/TR
DIODE GEN PURP 600V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5619US-TR is a military-grade, general-purpose diode with a 600 V reverse voltage rating and 1 A average rectified current. This device features a fast recovery time of 250 ns, suitable for applications requiring efficient switching. The forward voltage is 1.6 V at 3 A. Packaged in an A, SQ-MELF surface-mount case and supplied on tape and reel (TR), this diode is qualified under MIL-PRF-19500/429. It operates across a junction temperature range of -65°C to 175°C. This component is commonly utilized in aerospace, defense, and high-reliability industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Qualification | MIL-PRF-19500/429 |
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