JANS1N5618US
DIODE GEN PURP 600V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5618US is a general-purpose diode featuring a 600V reverse voltage and 1A average rectified current capability. This device is qualified to MIL-PRF-19500/427, indicating its suitability for demanding military and high-reliability applications. The SQ-MELF package provides a compact surface-mount solution with excellent thermal performance. Operating across a wide junction temperature range of -65°C to 200°C, the JANS1N5618US exhibits a forward voltage of 1.3V at 3A and a reverse recovery time of 2µs. Its standard recovery speed is suitable for power rectification and switching applications in industries such as aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Qualification | MIL-PRF-19500/427 |
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