JANS1N5617US
DIODE GEN PURP 400V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5617US is a general-purpose diode rated for 400V with a 1A average rectified current capability. This military-grade component, qualified to MIL-PRF-19500/427, features a fast recovery time (trr) of 150 ns, classifying it as a fast recovery diode. The SQ-MELF, A package (also known as D-5A) is designed for surface mounting. Its low leakage current is specified at 500 µA at 400V, and the forward voltage drop is a maximum of 1.6V at 3A. With an operating junction temperature range of -65°C to 200°C, the JANS1N5617US is suitable for demanding applications in aerospace and defense. Additional specifications include a capacitance of 35pF at 12V and 1MHz.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 35pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 400 V |
| Qualification | MIL-PRF-19500/427 |