JANS1N5616
DIODE GEN PURP 400V 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5616 is a general-purpose axial leaded diode designed for demanding applications. This military-grade component offers a maximum DC reverse voltage of 400V and an average rectified current handling capability of 1A. Featuring a low forward voltage drop of 1.3V at 3A, the JANS1N5616 exhibits a reverse leakage current of only 500 nA at 400V. With a reverse recovery time of 2 µs, it is classified as a standard recovery diode. Qualified to MIL-PRF-19500/427, this through-hole device operates across a junction temperature range of -65°C to 200°C. Its robust construction and performance characteristics make it suitable for use in aerospace, defense, and other high-reliability industrial systems requiring consistent diode functionality.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V |
| Qualification | MIL-PRF-19500/427 |
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