JANS1N5615
DIODE GEN PURP 200V 1A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's JANS1N5615 is a military-grade general-purpose diode with a maximum reverse voltage of 200V and an average rectified current of 1A. This through-hole component, packaged axially (A, Axial), features a forward voltage drop of 1.6V at 3A. With a low reverse leakage current of 500 nA at 200V and a capacitance of 45pF at 12V and 1MHz, it is suitable for demanding applications. The diode operates across a junction temperature range of -65°C to 175°C and meets the MIL-PRF-19500/429 qualification. Its fast recovery time of 150 ns positions it for use in various industrial and defense systems requiring reliable rectification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
| Qualification | MIL-PRF-19500/429 |