JANS1N5614US/TR
DIODE GEN PURP 200V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5614US-TR is a general-purpose diode designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/427, features a 200V reverse voltage rating and a 1A average rectified current capability. The diode exhibits a maximum forward voltage of 1.3V at 3A and a reverse recovery time of 2 µs, classifying it as a standard recovery device. Its SQ-MELF package, designated as 'A', is optimized for surface mounting and delivered in Tape & Reel (TR) packaging. This component is commonly utilized in aerospace, defense, and high-reliability industrial systems. The operating junction temperature range extends from -65°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Qualification | MIL-PRF-19500/427 |
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