JANS1N5614
DIODE GEN PURP 200V 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5614 is a general-purpose diode designed for demanding applications. This through-hole component features an axial leaded package (A, Axial) and is qualified to MIL-PRF-19500/427, indicating military-grade reliability. It offers a maximum DC reverse voltage (Vr) of 200V and a rectified average forward current (Io) of 1A. The forward voltage (Vf) is a maximum of 1.3V at 3A, with a reverse leakage current of 500 nA at 200V. The diode exhibits a standard recovery speed with a reverse recovery time (trr) of 2 µs. Operating over a junction temperature range of -65°C to 200°C, this component is suitable for use in aerospace, defense, and industrial systems requiring robust performance and high reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
| Qualification | MIL-PRF-19500/427 |
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