JANS1N5553US/TR
STD RECTIFIERManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JANS1N5553US-TR is a standard recovery rectifier diode designed for high-reliability applications. This component offers a maximum reverse voltage (Vr) of 800 V and a forward current (Io) of 3 A. It features a low reverse leakage current of 1 µA at 800 V and a forward voltage (Vf) of 1.3 V at 9 A. The JANS1N5553US-TR operates within a junction temperature range of -65°C to 175°C and is qualified to MIL-PRF-19500/420, indicating its suitability for demanding environments. The device is packaged in a SQ-MELF, B surface mount package and supplied on tape and reel. Its standard recovery speed is characterized by a reverse recovery time (trr) of 2 µs. This component is commonly utilized in aerospace, defense, and industrial power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Qualification | MIL-PRF-19500/420 |
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