JANS1N5553US
DIODE GEN PURP 800V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology JANS1N5553US is a general-purpose diode designed for demanding applications. This component features a high repetitive peak reverse voltage of 800 V and a continuous average rectified current handling capability of 3 A. Its SQ-MELF, B package facilitates efficient surface mounting. With a low reverse leakage current of 1 µA at 150 V and a forward voltage drop of 1.3 V at 9 A, it offers robust performance. The diode's standard recovery characteristic is greater than 500 ns for currents over 200 mA. Operating across a wide junction temperature range of -65°C to 175°C, and qualified to MIL-PRF-19500/420, this military-grade component is suitable for aerospace, defense, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/420 |
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