JANS1N5552US/TR
DIODE GEN PURP 600V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JANS1N5552US-TR is a military-grade general-purpose diode with a 600V reverse voltage rating and 3A average rectified current capability. This SQ-MELF packaged device features a low forward voltage of 1.2V at 9A and a reverse leakage of 1 µA at 150V. Its standard recovery speed is greater than 500ns with an Io of 200mA. Operating across a junction temperature range of -65°C to 175°C, this component is qualified under MIL-PRF-19500/420 and supplied on tape and reel. Applications include aerospace, defense, and industrial systems requiring high reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V |
| Qualification | MIL-PRF-19500/420 |
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